Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates
作者： M. Bennour , L. Bouzaïene , F. Saidi , L. Sfaxi , H. Maaref
DOI: 10.1007/S11051-011-0557-Y
关键词: Resolution (electron density) 、 Pl spectra 、 Full width at half maximum 、 High index 、 Materials science 、 Quantum dot 、 Photoluminescence 、 Condensed matter physics 、 Substrate (electronics) 、 Schrödinger equation
摘要: We have investigated the temperature dependence of photoluminescence (PL) peak position InAs self-assembled quantum dots (QDs) grown on GaAs(11N)A (N = 3, 5) substrates. The interband transition energy is calculated by resolution 3D Schrodinger equation for a parallelepipedic QD, with width about 8 nm and height around 3 nm. Experimentally, it was found that PL spectra quenches at 160 K. In addition, full half maximum (FWHM) has an abnormal evolution varying temperature. latter effect maybe due to carrier repopulation between QDs. disorientation GaAs substrate low terraces which presented in high index surfaces important contribution spectra. Despite non-realist chosen shape QD simplest adopted model, theoretical experimental results revealed clear agreement.
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