Particle penetration in Kane type semiconductor quantum dots
作者： F. M. Hashimzade , A. M. Babayev , S. Tez
DOI: 10.1140/EPJB/E2009-00326-9
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摘要: In the present paper effect of resonant tunnelling electrons in spherical quantum dots A3B5-type semiconductors is studied framework three-band Kane model. An analytical expression for coefficient transmission has been found. It shown that non-zero and peaks are observed with energy below height potential barrier. The numerical results given heterostructure InAs/GaAs.
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