Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity
作者： B. Smiri , I. Fraj , F. Saidi , R. Mghaieth , H. Maaref
DOI: 10.1016/J.JALLCOM.2017.11.121
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摘要: Abstract A ternary Indium-Aliminium-Arsenic (InAlAs) is grown, by metal organic chemical vapor deposition (MOCVD), on a substrate InP (311) with polarity and B, doped Fer (Fe) atomic. Their optical properties have been studied photoluminescence spectroscopy (PL) in the whole temperature range from 10 to 300 K. At low region, power dependent analysis of PL intensity reveals conventional law an exponent n close one, agreement type II nature emission. red shift transition has observed sample B. The temperature-dependent measurements exhibit abnormal behaviors such as S-shape PL-peak energy, inverted N-shape full width at half maximum (FWHM). These atypical are linked exciton localization phenomenon, which it more pronounced structure orientation. Room temperature-PL spectra covers both emissions 1.3 1.55 μm for B oriented substrates, respectively. Our results indicate that In0.513Al0.487As/InP A/B expected be advantageous their application telecommunication.
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