Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
作者： L. C. Poças , J. L. Duarte , I. F. L. Dias , E. Laureto , S. A. Lourenço
DOI: 10.1063/1.1475370
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摘要: Properties of the interface between epitaxial layer heavily doped Al0.48In0.52As:Si and InP(Fe) substrate are investigated by photoluminescence in AlInAs:Si/InP(Fe) heteroestructures grown molecular beam epitaxy. The effect on heterostructure optical properties including a thin Al0.22Ga0.26In0.52As:Si at is as well. To explain different emission energies observed, results analyzed using mixed-type I–II model, which considers type II narrow InAs well, with variable width, AlInAs InP. observation high 1.36 eV, low excitation intensity, explained taking into account doping level samples. observed transition luminescence thermal quenching tentatively analyzing spatial distribution electrons triangular quantum well formed (or mixed interface) a...
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