Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth

摘要: We report that highly crystalline graphene can be obtained from well-controlled surface morphology of the copper substrate. Flat was prepared by using a chemical mechanical polishing method. At early growth stage, density nucleation seeds polished Cu film much lower and domain sizes flakes were larger than those unpolished film. later these domains stitched together to form monolayer graphene, where orientation each crystal unexpectedly not different other. also found grain boundaries intentionally formed scratched area play an important role for seeds. Although best grown with low sheet resistance 260 Ω/sq, small portion multilayers near impurity particles or locally protruded parts.