Features of the Morphology and Structure of Thin Silicon Films

摘要: Abstract—The surface morphology and structure of LPCVD silicon thin films (with thicknesses 40 nm or less) obtained at a deposition temperature T = 550°С, which amorphous (a-Si) are usually obtained, 584°С, polycrystalline with hemispherical grains (HSG-Si) large roughness studied. It is found that, comparatively smooth surfaces form in the case 35 more, granular HSG-Si less. shown that deposited 550°С (d 28 nm) have analogous to 584°С 29 nm). as thickness Si film decreases nm, lower boundary range shifted toward smaller temperatures 550°C.