Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters

摘要: Abstract Generalized equations are derived that permit the determination of non-steady-state, thermal current vs temperature characteristics due to emission charge from interface states in MOS devices when increases uniformly with time. The applicable any trap distribution extends over more than about 4kT energy; for discrete traps also presented. important result emerging this work is case distributed I−T characteristic a direct reflection energy traps. Furthermore, it shown how attempt-to-escape frequency ν and, hence, their capture cross-section may be determined. density and levels discussed.