Cryogenic, absolute, high pressure sensor
作者： John J. Chapman , Qamar A. Shams , William T. Powers
DOI:
关键词: Pressure sensor 、 Thermal expansion 、 Substrate (electronics) 、 Nitride 、 Analytical chemistry 、 Silicon 、 Doping 、 Optoelectronics 、 Pressure measurement 、 Pressure vessel 、 Materials science
摘要: A pressure sensor is provided for cryogenic, high applications. highly doped silicon piezoresistive bonded to a substrate in an absolute sensing configuration. The aluminum nitride substrate. Aluminum has appropriate coefficient of thermal expansion use with at cryogenic temperatures. group sensors, either two sensors on substrates or four single are packaged vessel.
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