Method for manufacturing a semiconductor pressure sensor

作者: Gabriele Barlocchi , Benedetto Vigna , Pietro Corona , Lorenzo Baldo , Flavio Francesco Villa

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摘要: Method for manufacturing a semiconductor pressure sensor, wherein, in silicon substrate, trenches are dug and delimit walls; closing layer is epitaxially grown, that closes the at top forms suspended membrane; heat treatment performed so as to cause migration of walls form closed cavity underneath structures formed transducing deflection membrane into electrical signals.

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