Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors

摘要: CdxZn1−xTeySe1−y (CZTS) has emerged as a next-generation compound semiconductor for high energy gamma-ray detection. In the present study, we report first time hole transport property measurements in CZTS based detectors planar configuration. Current–voltage revealed bulk resistivity of ∼5 × 108 Ω cm and fabricated produced well-resolved 5486 keV alpha particle peaks, both electrons holes drifting alike, when pulse-height spectra (PHS) were recorded using 241Am radiation source. The PHS enabled to measure charge properties carriers. mobility–lifetime product (μτ) was calculated be 6.4 × 10−4 cm2 V−1 8.5 × 10−5 cm2 V−1, respectively, single polarity Hecht plot regression method. pre-amplifier pulses also processed digitally obtain electron drift mobilities 692 cm2 V−1 s−1 55 cm2 V−1 s−1, time-of-flight measured indicated lifetime greater than by factor ∼1.5. Gamma-ray that showed tailing 662 keV photopeak due trapping effects. Depth dependent generated from 2D biparametric plots reveal effects on gamma at different detector depths. Digital correction procedures applied generate with an resolution ∼2% γ-rays.