Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

摘要: A steady state kinetic model has been developed for the vapor-liquid-solid growth of Si whiskers or nanowires from liquid catalyst droplets. The is defined as one in which net injection rate into droplet equal to ejection due wire growth. Expressions that represent specific mechanisms and atoms have used their relative importance discussed. analysis shows evaporation reverse reaction rates need be invoked, apart just surface cracking precursor, order make radius dependent. When these pathways can neglected, become independent determine activation energies limiting step heterogeneous precursor decomposition. depend on mechanism at liquid-solid interface liquid-solid-vapor triple phase boundary. It shown when by nucleation motion ledges, a dependence does not come Gibbs-Thompson effect supersaturation liquid, but also actual area length available nucleation. Growth calculated using framework equations compared with experimental results. agreement trends found excellent. same account diverse pressure temperature reported literature. © 2012 American Institute Physics.