Thermodynamics and kinetics of the growth mechanism of vapor–liquid–solid grown nanowires
作者： Makoto Koto
DOI: 10.1016/J.JCRYSGRO.2015.04.038
关键词: Vapor–liquid–solid method 、 Thermodynamic equilibrium 、 Phase diagram 、 Kinetics 、 Phase (matter) 、 Phase transition 、 Steady state (chemistry) 、 Materials science 、 Nanowire 、 Thermodynamics
摘要: Abstract Nanowires are widely regarded as building blocks for next-generation devices because of their unique characteristics, particularly morphology. The vapor–liquid–solid (VLS) system has attracted much attention a standard method obtaining nanowires. Although there many studies, the VLS mechanism is still not fully understood. We have investigated thermodynamics and kinetics growth mechanism, focusing on composition catalyst reaction species. elucidated definition chemical potential each phase based diagram origin transition driving force, between liquid solid phases. equilibrium state can be altered by species composition, shape factor, nanowire diameter, which changes phase. In addition, we show flow particles relationship with during steady growth.
sci-hub.se 参考文章(22)
R. Lutwack, A. K. Praturi, G. Hsu, Chemical Vapor Deposition of Silicon from Silane Pyrolysis ,(1977)
Hemant Adhikari, Ann F. Marshall, Christopher E. D. Chidsey, Paul C. McIntyre, Germanium nanowire epitaxy: shape and orientation control. Nano Letters. ,vol. 6, pp. 318- 323 ,(2006) , 10.1021/NL052231F
Volker Schmidt, Stephan Senz, Ulrich Gösele, Diameter-dependent growth direction of epitaxial silicon nanowires. Nano Letters. ,vol. 5, pp. 931- 935 ,(2005) , 10.1021/NL050462G
Yi Cui, Qingqiao Wei, Hongkun Park, Charles M Lieber, Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species Science. ,vol. 293, pp. 1289- 1292 ,(2001) , 10.1126/SCIENCE.1062711
Dhayalan Shakthivel, Srinivasan Raghavan, Vapor-liquid-solid growth of Si nanowires: A kinetic analysis Journal of Applied Physics. ,vol. 112, pp. 024317- ,(2012) , 10.1063/1.4737597
Volker Schmidt, Heike Riel, Stephan Senz, Siegfried Karg, Walter Riess, Ulrich Gösele, Realization of a silicon nanowire vertical surround-gate field-effect transistor. Small. ,vol. 2, pp. 85- 88 ,(2006) , 10.1002/SMLL.200500181
E.I. Givargizov, Fundamental aspects of VLS growth Journal of Crystal Growth. ,vol. 31, pp. 20- 30 ,(1975) , 10.1016/0022-0248(75)90105-0
Yi Cui, Lincoln J. Lauhon, Mark S. Gudiksen, Jianfang Wang, Charles M. Lieber, Diameter-controlled synthesis of single-crystal silicon nanowires Applied Physics Letters. ,vol. 78, pp. 2214- 2216 ,(2001) , 10.1063/1.1363692
V. Schmidt, S. Senz, U. Gösele, Diameter dependence of the growth velocity of silicon nanowires synthesized via the vapor-liquid-solid mechanism Physical Review B. ,vol. 75, pp. 045335- ,(2007) , 10.1103/PHYSREVB.75.045335
S. Kodambaka, J. Tersoff, M. C. Reuter, F. M. Ross, Germanium nanowire growth below the eutectic temperature Science. ,vol. 316, pp. 729- 732 ,(2007) , 10.1126/SCIENCE.1139105