Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0001) surface: A first principle calculation

作者: Mingzhu Yang , Benkang Chang , Guanghui Hao , Jing Guo , Honggang Wang

DOI: 10.1016/J.APSUSC.2013.05.124

关键词: Analytical chemistryElectronic structureWork functionElectron affinityFirst principleAdsorptionChemistryCASTEPImpurityAtomic physicsDipole

摘要: Abstract In order to study the activation process of Ga1−xAlxN photocathodes theoretically, models Cs adsorption on Ga(Mg)0.75Al0.25N (0 0 0 1) surface are built, then atomic structure, electronic energy, work function, dipole moment and optical properties calculated. All calculations carried out using Cambridge Serial Total Energy Package (CASTEP) based first principle. Results show that Mg doping can reduce function surface, favorite site is top p-type impurity. produce structure bulk with n-type which helpful band bend downward decrease electron affinity seriously. The absorption coefficient system less than clean surface. Theoretical help improve technology photocathodes.

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