Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates

摘要: Abstract Photocathode devices operating in reflection-mode, where the photoemission is detected on same side as light irradiation, were developed for detection of deep ultraviolet by using p-AlxGa1−xN films grown Si(1 1 1) substrates. The external quantum efficiencies high 20–15% at 200 nm and 280 nm, while value was low 10−2% 310 nm. on–off ratio more than four orders magnitude, which represents solar-blind sensitivity. escape probability AlxGa1−xN photocathode decreased with increase AlN mole fraction. effective barrier potential against photoelectron emission near surface reduced due to upward shift conduction band AlxGa1−xN. from terminated Cs–O adatoms will be discussed terms diagrams that evaluated hard X-ray spectroscopy.