Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films
作者： A. Rodríguez-Gómez , M. Moreno-Rios , R. García-García , A.L. Pérez-Martínez , J. Reyes-Gasga
DOI: 10.1016/J.MATCHEMPHYS.2018.01.032
关键词: Chemical vapor deposition 、 Remote plasma 、 Optoelectronics 、 Thin film 、 Highly oriented pyrolytic graphite 、 Substrate (electronics) 、 Wafer 、 Silicon nitride 、 Silicon 、 Materials science
摘要: Abstract By using a remote plasma enhanced chemical vapor deposition system, we grow silicon rich nitride thin film on the surface of five different substrates: wafer, fused silica, highly oriented pyrolytic graphite, muscovite mica and potassium chloride. means high-resolution transmission electron microscopy studied influence that each substrate has auto-formation quantum dots (≤4.2 nm) embedded in grown film. We conjecture growth is carried out by formation reactive intermediates are chemisorbed surface. conclude proposing hypothesis profile minimal can embed dots.
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