Measurement of radiative recombination coefficient and carrier leakage in 1.3 μm INGaAsP lasers with lightly doped active layers
作者： C.B. Su , J. Schlafer , J. Manning , R. Olshansky
DOI: 10.1049/EL:19820756
关键词: Doping 、 Spontaneous emission 、 Auger effect 、 Electron mobility 、 Radiative transfer 、 Materials science 、 Laser 、 Carrier lifetime 、 Optoelectronics 、 Gallium arsenide
摘要: Carrier lifetime and spontaneous emission data for InGaAsP lasers with lightly doped active layers are used to measure the carrier-dependent radiative coefficient B(n) leakage current due electron drift. The Auger recombination is less than 0.1 × 10−28 cm6/s.
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