An experimental and computer simulation study of the process of buried SiO2layer formation after oxygen ion implantation into silicon
作者： R. A. Yankov , I. R. Chakarov , I. H. Wilson
DOI: 10.1080/10420159008220564
关键词: Materials science 、 Oxygen 、 Layer (electronics) 、 Channelling 、 Analytical chemistry 、 Ion implantation 、 Substrate (electronics) 、 Oxide 、 Thin film 、 Silicon
摘要: Abstract The aims of this study are to investigate (i) the influence substrate temperature during implant on crystal quality overlying silicon layer and (ii) synthesis thin (less than 2000 A) buried layers SiO2 from lower dose (∼ 1017 cm−2) oxygen implants at various medium (80–150 keV) energies after a 30 min anneal 1400°C in order reveal energy dependence minimum substoichiometric necessary produce continuous oxide layer. main diagnostic technique used is Rutherford backscattering channelling (RBS) 1.5 MeV He+ ions. A dynamic computer simulation evolution implanted profiles performed as useful adjunct experimental methods. Experimental results compared with modelling distributions.
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