Input power dependence of growth rate and quality of diamond films deposited in a d.c. arcjet system

摘要: Abstract Using a d.c. arcjet chemical vapor deposition (CVD) system, the dependence of growth rate and quality diamond films on input power to plasma torch was investigated. It found that in remote methane feed mode, increases as increases, confirming benefit using high torches. But unexpectedly, content non-diamond carbon or defect density thin increase function power, thick film deposited at low quality. These results were analyzed considering kinetics gas activation taking place CVD process. is believed along with atomic hydrogen will effectively activate hydrocarbon radicals, which bring about both large probability incorporation into growing materials.