作者: J.G Buijnsters , P Shankar , W.J.P van Enckevort , J.J Schermer , J.J ter Meulen
DOI: 10.1016/S0925-9635(02)00158-9
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摘要: Abstract In this report, we present a study of diamond deposition on pure and nitrided chromium substrates using the hot filament-assisted chemical vapour technique. Deposition was performed at substrate temperatures varying from 475 to 750 °C for different exposure times. Scanning electron microscopy (SEM), micro-Raman spectroscopy X-ray diffraction (XRD) techniques were employed modified interlayers films. The high solubility diffusivity carbon in result an increased incubation time nucleation. However, even 4–5-μm-thick layer is efficient as diamond-nucleating surface, with reduced compared chromium. Fully covering adhering films obtained Cr specimens between 550 °C. As nitriding process, nitride diffusion reduces thereby reducing Due strong mechanical bonding substrates, residual compressive stresses are accommodated, leading adherent, continuous study, however, also indicates optimal low-temperature condition obtain film directly Cr.