Device having dual etch stop liner and reformed silicide layer and related methods
作者： Dureseti Chidambarrao , Shreesh Narasimha , Rajeev Malik , Ying Li
DOI:
关键词: Layer (electronics) 、 Optoelectronics 、 Forensic engineering 、 Semiconductor device 、 Silicon nitride 、 Materials science 、 Policide 、 Silicide
摘要: The present invention provides a semiconductor device having dual silicon nitride liners and reformed silicide layer related methods for the manufacture of such device. has thickness resistance substantially similar to not exposed formation liners. A first aspect method use in comprising steps applying liner layer, removing portion liner, reforming removed during removal step, second layer.
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