Capacitor and method for fabricationg the same, and semiconductor device and method for fabricating the same
作者： Akiyoshi Watanabe , Yoshihiro Matsuoka , Makoto Yasuda
DOI:
关键词: Analytical chemistry 、 Conductor 、 Optoelectronics 、 Electrode 、 Semiconductor device 、 Dielectric 、 Materials science 、 Impurity 、 Capacitor 、 Spark plug 、 Layer (electronics)
摘要: The semiconductor device comprises a isolation region 14 formed in substrate 10 , lower electrode 16 12 defined by the and of an impurity diffused layer, dielectric film 18 thermal oxide on electrode, upper 20 film, insulation layer 26 substrate, covering first conductor plug 30 buried contact hole 28 down to second b being not region. is whereby short-circuit between cavity can be prevented. Thus, capacitor high reliability provided.
google.nl 参考文章(17)
Bruce Lee Inn, Marty Garnett, Hideaki Tsuchiko, Phillip Fischer, LDMOS field effect transistor with improved ruggedness in narrow curved areas ,(2001)
Tai-su Park, Han-sin Lee, Moon-han Park, Kyung-Won Park, Trench isolatoin regions having trench liners with recessed ends ,(2001)
Sang-Hoon Park, Metal-insulator-metal capacitor and method for manufacturing the same ,(2004)
Edward Houn, Water Lur, Stress relaxation in dielectric before metallization ,(1996)
Chiyoshi Kamada, Seigoh Yukutake, Takayuki Iwasaki, Katsuhiro Furukawa, Minehiro Nemoto, Takayuki Oouchi, Nobuyasu Kanekawa, Masatsugu Amishiro, Yasuyuki Kojima, Shinichiro Mitani, Atsuo Watanabe, Isolator and a modem device using the isolator ,(1999)
Navakanta Bhat, Ping Chen, Paul G. Y. Tsui, Hsing-Huang Tseng, Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region ,(1998)
Yasushi Ito, Kenji Yoshida, Semiconductor integrated circuit device with MOS transistor and MOS capacitor and method for manufacturing the same ,(2000)
Hu H. Chao, Storage capacitor optimization for one device FET dynamic RAM cell ,(1983)
Yuko Ohgishi, Method of producing semiconductor device and semiconductor device ,(2004)