In As/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure
作者： W.J. Choi , J.D. Song , J.I. Lee , K.C. Kim , T.G. Kim
DOI: 10.1016/J.PHYSB.2005.12.221
关键词: Wavelength 、 Quantum dot laser 、 Quantum dot 、 X-ray absorption spectroscopy 、 Materials science 、 Quantum well 、 Photoluminescence 、 Optoelectronics 、 Molecular beam epitaxy 、 Stimulated emission
摘要: Abstract We report the advantages of using InAs/GaAs quantum dots (QDs) having In x Ga 1 - As asymmetric strain-released layers (ASRL) over conventional QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance uniformity InAs an well structure. The red shift as large ∼ 50 nm could be achieved by varying thickness and indium composition ASRL. observed longest 1288 nm produced QD with ASRL photoluminescence (PL). However, stimulated emission gave 1206 nm, blue-shifted 82 from PL peak at room temperature, which is attributed optical transitions via higher sub-band levels QDs.
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