The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
作者： Mohammadreza Shahzadeh , Mohammad Sabaeian
DOI: 10.1063/1.4881980
关键词: Wetting 、 Quantum dot 、 Wetting layer 、 Gallium arsenide 、 Oscillator strength 、 Transition dipole moment 、 Polarization (waves) 、 Electron 、 Materials science 、 Condensed matter physics
摘要: The authors report on the impact of wetting layer thickness and quantum dot size electronic optical properties dome-shaped InAs/GaAs dots (QDs) with strained potential. Two thicknesses 0.5 2.0 nm were compared. A strong dependence P-to-S transition energy, dipole moment, oscillator strength, linear third-order nonlinear susceptibilities concluded. moment was shown to be purely in-plane polarization. absorption dispersion showed a red shift when increased. Our results revealed that susceptibility is much more sensitive QD compared susceptibility. An interpretation presented based probability density finding electron inside layer. are in good agreement previously reported experimental data.
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