Third harmonic generation in intraband transitions of spherical silicon quantum dots
作者： Anchala , S. P. Purohit , K. C. Mathur
DOI: 10.1063/1.4763477
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摘要: A theoretical study of the third harmonic generation (THG) is reported involving intraband transitions in conduction band spherical Si semiconductor quantum dot surrounded by SiO2, Si3N4, and SiC matrix. The wave function energies a singly charged are calculated using effective mass approximation. finite barrier height considered at interface surrounding results show that THG coefficient silicon strongly depends on radius matrix.A
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