Linear and nonlinear intersubband optical properties of Si quantum dot embedded in oxide, nitride, and carbide matrix

摘要: In this paper we study the linear and nonlinear intersubband optical properties of a nanocrystalline singly charged Si semiconductor quantum dot surrounded by an amorphous matrix silicon dioxide, nitride, carbide. A finite barrier height is considered at interface matrix. We also consider effect self-energy associated with surface polarization due to charging size dependent dielectric constant dot. The surrounding investigated on absorption coefficient, refractive index changes, susceptibility, photoelectric cross section. Using effective mass approximation (EMA) results are obtained for different radii, photon energies, intensities. It noted that increase in leads blueshift peak positions coefficients change.