作者: Deepti Maikhuri , S. P. Purohit , K. C. Mathur
DOI: 10.1063/1.3693405
关键词: Electron 、 Condensed matter physics 、 Photoexcitation 、 Ground state 、 Semiconductor 、 Quantum dot 、 Effective mass (solid-state physics) 、 Quantum dot laser 、 Chemistry 、 Refractive index
摘要: In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework effective mass approximation, have studied intraband S-P, and P-D transitions a singly charged dot. The are investigated terms linear nonlinear photoabsorption coefficient, change refractive index, third order susceptibility oscillator strengths. parabolic confinement potential electron these parameters with variation size, energy intensity incident radiation. photoionization cross sections also obtained for different radii from initial ground state It is found that potential, radiation affects significantly.