Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

作者: Deepti Maikhuri , S. P. Purohit , K. C. Mathur

DOI: 10.1063/1.3693405

关键词: ElectronCondensed matter physicsPhotoexcitationGround stateSemiconductorQuantum dotEffective mass (solid-state physics)Quantum dot laserChemistryRefractive index

摘要: In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework effective mass approximation, have studied intraband S-P, and P-D transitions a singly charged dot. The are investigated terms linear nonlinear photoabsorption coefficient, change refractive index, third order susceptibility oscillator strengths. parabolic confinement potential electron these parameters with variation size, energy intensity incident radiation. photoionization cross sections also obtained for different radii from initial ground state It is found that potential, radiation affects significantly.

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