Screening in Semiconductor Nanocrystallites and Its Consequences for Porous Silicon.

摘要: Consequences of the modified dielectric properties semiconductor crystallites are explored. The notion and usefulness an effective constant analyzed using a self-consistent linear screening calculation. binding energy hydrogenic impurities is defined calculated, it shown why these always ionized in porous silicon. Self-energy terms associated with surface polarization charge discussed context Coulomb charging effects. Their contribution to exciton energies also determined. effects on carrier injection silicon finally considered be important.