Determination of boron in natural semiconducting diamond by prompt particle nuclear microanalysis and Schottky barrier differential-capacitance measurements
作者： E C Lightowlers , A T Collins
DOI: 10.1088/0022-3727/9/6/008
关键词: Depletion region 、 Acceptor 、 Materials science 、 Diamond 、 Boron 、 Analytical chemistry 、 Schottky barrier 、 Schottky diode 、 Alpha particle 、 Differential capacitance
摘要: Capacitance-voltage characteristics have been obtained for Schottky barrier diodes, formed on polished surfaces of natural p-type semiconducting diamond, before and after illumination with radiation capable neutralizing ionized donors in the depletion layer. Plots 1/C2 versus V two cases yielded values both acceptor concentration NA donor ND. Comparison these data those from Hall effect measurements indicate that latter overestimate value NA-ND by almost a factor 2. The boron has determined approximately same surface layer as capacitance detecting alpha -particles emitted during irradiation 700 keV protons using reaction 11B(p, 1)8Be* to 2 A quantitative correlation between concentrations.
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