Folded acoustic phonons in Si-Si x Ge 1-x superlattices
作者： H. Brugger , G. Abstreiter , H. Jorke , H. J. Herzog , E. Kasper
关键词: Acoustic Phonons 、 Raman spectroscopy 、 Raman scattering 、 Condensed matter physics 、 Superlattice 、 Period (periodic table) 、 Materials science 、 Elastic continuum 、 Phonon 、 X-ray Raman scattering
摘要: Raman scattering from folded longitudinal acoustic phonons in Si-${\mathrm{Si}}_{\mathrm{x}}$${\mathrm{Ge}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$ superlattices is observed. The measured phonon energies are explained by use of the elastic continuum theory for modes. This leads to an accurate determinatnion superlattice period.
harvard.edu
sci-hub.se 参考文章(11)
E. Kasper, H. J. Herzog, H. Kibbel, A one-dimensional SiGe superlattice grown by UHV epitaxy Applied physics. ,vol. 8, pp. 199- 205 ,(1975) , 10.1007/BF00896611
J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, I. K. Robinson, GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy Journal of Vacuum Science and Technology. ,vol. 2, pp. 436- 440 ,(1984) , 10.1116/1.572361
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog, Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si / Si x Ge 1 − x Superlattices Physical Review Letters. ,vol. 54, pp. 2441- 2444 ,(1985) , 10.1103/PHYSREVLETT.54.2441
R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Störmer, K. W. Wecht, R. T. Lynch, K. Baldwin, Modulation doping in GexSi1−x/Si strained layer heterostructures Applied Physics Letters. ,vol. 45, pp. 1231- 1233 ,(1984) , 10.1063/1.95074
R. People, Erratum: Indirect band gap of coherently strained Ge x Si 1 − x bulk alloys on silicon substrates Physical Review B. ,vol. 32, pp. 1405- 1408 ,(1985) , 10.1103/PHYSREVB.32.1405
U. Gnutzmann, K. Clausecker, Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure Applied Physics. ,vol. 3, pp. 9- 14 ,(1974) , 10.1007/BF00892328
C. Colvard, R. Merlin, M. V. Klein, A. C. Gossard, Observation of Folded Acoustic Phonons in a Semiconductor Superlattice Physical Review Letters. ,vol. 45, pp. 298- 301 ,(1980) , 10.1103/PHYSREVLETT.45.298
J. Sapriel, J. C. Michel, J. C. Tolédano, R. Vacher, J. Kervarec, A. Regreny, Light scattering from vibrational modes inGaAs−Ga1−xAlxAssuperlattices and related alloys Physical Review B. ,vol. 28, pp. 2007- 2016 ,(1983) , 10.1103/PHYSREVB.28.2007
S. Venugopalan, L. A. Kolodziejski, R. L. Gunshor, A. K. Ramdas, Raman scattering from molecular beam epitaxially grown superlattices of diluted magnetic semiconductors Applied Physics Letters. ,vol. 45, pp. 974- 976 ,(1984) , 10.1063/1.95469
F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, B. A. Wilson, Raman scattering from GexSi1−x/Si strained‐layer superlattices Applied Physics Letters. ,vol. 45, pp. 1138- 1140 ,(1984) , 10.1063/1.95014