Epitaxial Growth and Characterization of β ‐ SiC Thin Films
作者： P. Liaw , R. F. Davis
DOI: 10.1149/1.2113921
关键词: Optics 、 Torr 、 Analytical chemistry 、 Epitaxy 、 Single crystal 、 Crystal growth 、 Monocrystalline silicon 、 Thin film 、 Chemical vapor deposition 、 Chemistry 、 Scanning electron microscope
摘要: … growth surface on the fl-SiC film. Silicon carbide (SIC) possesses a unique combination of … After the measurement, a very thin Ni film was burned into the fi-SiC film as a result of Joule …
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