β-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition

摘要: In this study, β-SiC has been prepared by chemical vapor deposition using silane and ethylene in a rapid thermal processor at reduced pressures. processing (RTP), the is controlled temperature of substrate, which can be changed isothermally from room to as high 1400°C less than 5 seconds. The short transient times exposure allows formation very thin films with minimized interlayer diffusion. Also, multiple layers different same chamber without disturbing substrate possible because may rapidly cooled lower temperatures while reactant gases are changed, then heated back temperatures.