Fabrication of isotype (p-p) selenium–polyaniline heterojunction diode by electrochemical method
作者： S.S. Joshi , C.D. Lokhande
DOI: 10.1016/J.APSUSC.2005.11.070
关键词: Polyaniline 、 Selenium 、 Analytical chemistry 、 Current density 、 Heterojunction 、 Monoclinic crystal system 、 Diode 、 Amorphous solid 、 Thin film 、 Materials science
摘要: Abstract In the present work, for first time, heterojunction has been fabricated using electrochemically deposited isotype p-selenium–p-polyaniline from a single solution bath. The structural characterization of selenium and polyaniline thin film was carried out XRD technique. Polyaniline exhibited amorphous structure while offered monoclinic ( β ) phase. junction formed by electrodepositing over heating at 423 K. current density versus voltage J – V plot showed formation with ideality factor 1.16. From characteristics different temperatures, static resistance R s ), dynamic d rectification ratio diodes were determined. Heat treatment above 448 K caused breakdown.
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