DC electroluminescence from PECVD grown thin films of silicon-rich silica
作者： P.F. Trwoga , A.J. Kenyon , C.W. Pitt
DOI: 10.1049/EL:19961122
关键词: Plasma-enhanced chemical vapor deposition 、 Optoelectronics 、 Porous silicon 、 Silicon 、 Active layer 、 Electroluminescence 、 Materials science 、 Thin film 、 Photoluminescence 、 Layer (electronics)
摘要: The authors report the fabrication of an electroluminescent MOS device using microclustered silicon in silica as active layer. A DC electroluminescence spectrum is shown and compared with photoluminescence from same material. current-voltage curve is presented which shows weak rectifying behaviour consistent with a space-charge limited structure a high resistivity layer
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