Investigation of morphological and electrical properties of RTA-processed TiO 2 for memristor application

摘要: Titanium dioxide (TiO2) thin films were synthesized by sol–gel process followed post-deposition heat treatment using rapid thermal annealing (RTA) to improve the film quality. TiO2 annealed at various temperatures ranging from 500 900 °C for 1–10 min in air and oxygen ambient. The uniform distribution of grains has been studied analyzing field emission scanning electron microscope micrographs. structural studies carried out X-ray diffraction Raman spectroscopy technique which have confirmed presence anatase rutile phase after 700 °C. maximum values oxide charge density (Qox) interface (Dit) calculated as 2.58 × 1012 cm−2 2.31 × 1012 eV−1 cm−2 2.19 × 1012 cm−2 1.53 × 1012 eV−1 cm−2 700 °C, 10 min duration ambient, respectively. resistive switching shown better performance 700 °C ambient with current on/off ratio 40. Moreover, RTA processed 5 min ratios found be 836 140,