Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
作者： P Schlotter , J Baur , Ch Hielscher , M Kunzer , H Obloh
DOI: 10.1016/S0921-5107(98)00352-3
关键词: Photoluminescence 、 Etching (microfabrication) 、 Optoelectronics 、 Phosphor 、 Light-emitting diode 、 Optics 、 Materials science 、 Double heterostructure 、 Luminescence 、 Diode 、 Electroluminescence
摘要: We report on the fabrication as well as on the optical and electrical characterization of violet and blue GaN/InGaN/AlGaN double heterostructure light emitting diodes (DH LEDs) …
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