Hydrogen in crystalline silicon: A deep donor?
作者： M. Capizzi , A. Mittiga
DOI: 10.1063/1.98032
关键词: Hydrogen 、 Doping 、 Secondary ion mass spectrometry 、 Fermi level 、 Diffusion 、 Silicon 、 Impurity 、 Crystalline silicon 、 Atomic physics 、 Chemistry
摘要: An analysis of the hydrogen concentration profiles obtained from secondary ion mass spectrometry in boron‐doped silicon points to a deep donor state located ∼0.1 eV above Fermi level for intrinsic material. The theoretical model takes into account both neutral and ionized diffusion, latter enhanced by built‐in electric field associated with doping gradient. activation energies two diffusion processes are ∼1.2 ∼0.8 eV, respectively. A formerly reported discrepancy between low‐ high‐temperature results is lifted.
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