The FEM analysis of FGM piezoelectric semiconductor problems
作者： J. Sladek , V. Sladek , H.H.-H. Lu , D.L. Young
DOI: 10.1016/J.COMPSTRUCT.2016.12.019
关键词: Piezoelectricity 、 Finite element method 、 Constitutive equation 、 Piezoelectric coefficient 、 Structural engineering 、 Mechanics 、 Functionally graded material 、 Material properties 、 Transverse isotropy 、 Boundary value problem 、 Materials science
摘要: Abstract The finite element method is developed for 3-D general boundary value problems a piezoelectric semiconductor with functionally graded material properties. electron density and electric current are additionally considered in the constitutive equations semiconductors. A variation of properties Cartesian coordinates treated numerical analyses. influence parameter gradation initial investigated static case. Numerical results presented beam under impact mechanical load. Transversely isotropic this study.
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