DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique
作者： D.M. Shah , W.K. Chan , T.J. Gmitter , L.T. Florez , H. Schumacher
DOI: 10.1049/EL:19901199
关键词: Optoelectronics 、 Transconductance 、 Leakage (electronics) 、 MESFET 、 Epitaxy 、 Molecular beam 、 Materials science 、 Silicon 、 Molecular beam epitaxy 、 Gallium arsenide
摘要: GaAs MESFETs have been fabricated on a silicon substrate using molecular beam epitaxy grown film detached from its growth and attached covered with dielectric. The device processing is done the substrate. exhibit IDSS = 130 mA/mm, gm=135 mS/mm for 1.3 μm gate length unity current gain cut-off frequency fτ of 12 GHz. Excellent isolation subpicoampere leakage currents obtained.
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