As Grown Stress Free GaAs on Si by Regrowth on Chemically Released GaAs on Si Mesas

摘要: GaAs layers are grown on Si mesas, fabricated using a novel Mesa Release and Deposition (MRD) technique. The mesas that serve as the substrate for selective epitaxy in 1 µm thick layer. MRD structures obtained after complete underetching of subsequent deposition, self-aligned their original positions. samples carrying cleaned before epilayer is deposited. Spatialy resolved photoluminescence used to assess strain level regrown In contrast expected shift splitting valence band biaxially strained GaAs/Si, we find peak band-to-band optical transition heteroepitaxial GaAs/MRD/Si reference at 77 K only 4 nm no observed