Chapter 8 – EPITAXIAL LIFT-OFF AND RELATED TECHNIQUES

D.R. Myers, J.F. Klem, J.A. Lott, (AlGa)As/(InGa)As strained-quantum-well FETs on silicon dioxide by selective device lift-off as an alternative to heteroepitaxy international electron devices meeting. ,vol. 136, pp. 704- 707 ,(1988) , 10.1109/IEDM.1988.32910

Bertil Hök, Chantal Dubon, Christer Ovrén, Anodic bonding of gallium arsenide to glass Applied Physics Letters. ,vol. 43, pp. 267- 269 ,(1983) , 10.1063/1.94322

E. Yablonovitch, K. Kash, T.J. Gmitter, L.T. Florez, J.P. Harbison, E. Colas, Regrowth of GaAs quantum wells on GaAs liftoff films 'van der Waals bonded' to silicon substrates Electronics Letters. ,vol. 25, pp. 171- 171 ,(1989) , 10.1049/EL:19890123

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Fumihiko Kobayashi, Youichi Sekiguchi, GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique Japanese Journal of Applied Physics. ,vol. 31, ,(1992) , 10.1143/JJAP.31.L850

Makoto Konagai, Mitsunori Sugimoto, Kiyoshi Takahashi, High efficiency GaAs thin film solar cells by peeled film technology Journal of Crystal Growth. ,vol. 45, pp. 277- 280 ,(1978) , 10.1016/0022-0248(78)90449-9

D.M. Shah, W.K. Chan, T.J. Gmitter, L.T. Florez, H. Schumacher, B.P. van der Gaag, DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique Electronics Letters. ,vol. 26, pp. 1865- 1866 ,(1990) , 10.1049/EL:19901199

G.F. Burns, C.G. Fonstad, Monolithic fabrication of strain-free (Al,Ga)As heterostructure lasers on silicon substrates IEEE Photonics Technology Letters. ,vol. 4, pp. 18- 21 ,(1992) , 10.1109/68.124861

J. F. Klem, E. D. Jones, D. R. Myers, J. A. Lott, Characterization of thin AlGaAs/InGaAs/GaAs quantum‐well structures bonded directly to SiO2/Si and glass substrates Journal of Applied Physics. ,vol. 66, pp. 459- 462 ,(1989) , 10.1063/1.343850

H. Schumacher, T.J. Gmitter, H.P. Leblanc, R. Bhat, E. Yablonovitch, M.A. Koza, High-speed InP/GaInAs photodiode on sapphire substrate Electronics Letters. ,vol. 25, pp. 1653- 1654 ,(1989) , 10.1049/EL:19891108