Suppression of dislocation accumulation in GaAs film on Si substrate by combination of impurity doping and selective area growth

摘要: Dislocation accumulation in gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, examined by crystal plasticity simulation. A new approach suppression of dislocation proposed such that selective growth film partial doping impurities into it are combined. The results show possibility localize plastic deformation near film/substrate interface keep surface region almost dislocation-free. Geometry selectively grown a strategy for impurities, suppresses considered.