Dislocation generation of GaAs on Si in the cooling stage
作者： Masami Tachikawa , Hidefumi Mori
DOI: 10.1063/1.102951
关键词: Dislocation 、 Composite material 、 Vapor phase 、 Etching (microfabrication) 、 Mineralogy 、 Materials science 、 Stage (hydrology) 、 Etch pit density
摘要: In situ measurements are carried out for the etch pit density (EPD) of GaAs on Si at growth temperature using a newly developed HCl‐GaCL vapor phase etching method. The EPD obtained is 4×104 cm−2 temperature. However, after cools down to room temperature, 8×106 molten KOH etching. GaP also out, and almost same result obtained; that around 107 dislocations generated in cooling stage. This first evidence thermal stress stage determines quality heteroepitaxial layers Si.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(12)
J. Angilello, R. M. Potemski, G. R. Woolhouse, Etch pits and dislocations in {100} GaAs wafers Journal of Applied Physics. ,vol. 46, pp. 2315- 2316 ,(1975) , 10.1063/1.321833
Mitsuru Sugo, Naoto Uchida, Akio Yamamoto, Takashi Nishioka, Masafumi Yamaguchi, Residual strains in heteroepitaxial III-V semiconductor films on Si(100) substrates Journal of Applied Physics. ,vol. 65, pp. 591- 595 ,(1989) , 10.1063/1.343113
Ichiro Yonenaga, Koji Sumino, Effects of In impurity on the dynamic behavior of dislocations in GaAs Journal of Applied Physics. ,vol. 62, pp. 1212- 1219 ,(1987) , 10.1063/1.339672
Masafumi Yamaguchi, Akio Yamamoto, Masami Tachikawa, Yoshio Itoh, Mitsuru Sugo, Defect reduction effects in GaAs on Si substrates by thermal annealing Applied Physics Letters. ,vol. 53, pp. 2293- 2295 ,(1988) , 10.1063/1.100257
D. J. Stirland, Quantitative defect etching of GaAs on Si: Is it possible? Applied Physics Letters. ,vol. 53, pp. 2432- 2434 ,(1988) , 10.1063/1.100211
Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi, Growth of GaAs on Si by MOVCD Journal of Crystal Growth. ,vol. 68, pp. 21- 26 ,(1984) , 10.1016/0022-0248(84)90391-9
N. Otsuka, C. Choi, Y. Nakamura, S. Nagakura, R. Fischer, C. K. Peng, H. Morkoç, High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface Applied Physics Letters. ,vol. 49, pp. 277- 279 ,(1986) , 10.1063/1.97140
H. Mori, M. Ogasawara, M. Yamamoto, M. Tachikawa, New hydride vapor phase epitaxy for GaP growth on Si Applied Physics Letters. ,vol. 51, pp. 1245- 1247 ,(1987) , 10.1063/1.98693
Takashi Ueda, Sachiko Onozawa, Masahiro Akiyama, Masaaki Sakuta, The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates Japanese Journal of Applied Physics. ,vol. 27, pp. L1815- L1818 ,(1988) , 10.1143/JJAP.27.L1815
R. Hull, S. J. Rosner, S. M. Koch, J. S. Harris, Atomic structure of the GaAs/Si interface Applied Physics Letters. ,vol. 49, pp. 1714- 1716 ,(1986) , 10.1063/1.97224