III–V on Si: heteroepitaxy versus lift-off techniques
作者： J. De Boeck , G. Borghs
DOI: 10.1016/0022-0248(93)90583-I
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摘要: Abstract We review the technological processes that share goal of combining dissimilar (III–V compounds and Si) semiconductor materials on a single substrate in order to achieve enhanced performance functionality devices circuits. In particular, we address these techniques enable monolithic solutions based fabrication thin crystalline III–V films substrate. This process can be completed by heteroepitaxial growth or thin-film transfer discuss present state techniques. find heteroepitaxy Si is still focusing quality, which will illustrate with some recent results, while currently tackling more processing related issues. Beside technologies, hybrid flip-chip also mature candidate for integration optical electronic functions.
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