Mesa release and deposition used for GaAs-on-Si MESFET fabrication
作者： J. de Boeck , G. Zou , M. van Rossum , G. Borghs
DOI: 10.1049/EL:19910015
关键词: Mesa 、 Optoelectronics 、 Silicon 、 Deposition (law) 、 Semiconductor device fabrication 、 Fabrication 、 MESFET 、 Gallium arsenide 、 Field-effect transistor 、 Materials science
摘要: A report is made on the first devices processed using a novel mesa release and deposition (MRD) technique hetero-epitaxial GaAs-on-Si. Mesas are etched, released by under-etching deposited selfaligned their original positions. Standard MESFET processing performed MRD structures, demonstrating suitability of for fabrication monolithic optoelectronic GaAs Si
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