Complete strain relief of heteroepitaxial GaAs on silicon
作者： Geoffrey F. Burns , Clifton G. Fonstad
DOI: 10.1063/1.108490
关键词:
摘要: High quality strain‐free heteroepitaxial GaAs‐on‐Si has been produced by annealing chemically separated GaAs epitaxial layers grown molecular beam epitaxy directly on silicon substrates. A process sequence developed which retains the layer in place during chemical separation and post‐processing, thus maintaining a monolithic fabrication sequence. Using low temperature photoluminescence, it is shown that majority of residual strain eliminated separation. Subsequent rapid thermal found to remove remaining significantly improve material quality. The presented forms basis for integration high (Al,Ga)As electrical optical devices with circuitry.
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