Evaluation of GaAs Regrowth on A Novel GaAs/SiO2 Composite Surface On Silicon
作者： J. De Boeck , J. Alay , J. Vanhellemont , B. Brijs , W. Vandervorst
DOI: 10.1557/PROC-221-411
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摘要: GaAs is grown by molecular beam epitaxy (MBE) on composite GaAs-SiO2 nucleation layers fabricated Si substrates. The surface (CS) formed an initial deposition of islands MBE, followed oxidation the bare regions surrounding islands. performed at 265°C in afterglow a microwave induced plasma. fabrication layer compatible with process. growth CS's to study seeded lateral overgrowth SiO2. We find single crystal SiO2 up 50 nm wide. On large density twins present. seeds are not pseudomorphic and misfit dislocation segments constitute source threading defects. potential technique for GaAs-on-Si improvement discussed.
sci-hub.se 参考文章(15)
F.J. Grunthaner, P.J. Grunthaner, Chemical and electronic structure of the SiO2/Si interface Materials Science Reports. ,vol. 1, pp. 65- 160 ,(1986) , 10.1016/S0920-2307(86)80001-9
J. de Boeck, G. Zou, M. van Rossum, G. Borghs, Mesa release and deposition used for GaAs-on-Si MESFET fabrication Electronics Letters. ,vol. 27, pp. 22- 23 ,(1991) , 10.1049/EL:19910015
A. Christou, J. Stoemenos, N. Flevaris, Ph. Komninou, A. Georgakilas, Defect microstructure in laser‐assisted modulation molecular‐beam epitaxy GaAs on (100) silicon Journal of Applied Physics. ,vol. 68, pp. 3298- 3302 ,(1990) , 10.1063/1.346380
Brian W. Dodson, Paul A. Taylor, Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures Applied Physics Letters. ,vol. 49, pp. 642- 644 ,(1986) , 10.1063/1.97066
F. Ernst, P. Pirouz, Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical‐vapor deposition Journal of Applied Physics. ,vol. 64, pp. 4526- 4530 ,(1988) , 10.1063/1.341280
J. De Boeck, C. Van Hoof, K. Deneffe, G. Borghs, As Grown Stress Free GaAs on Si by Regrowth on Chemically Released GaAs on Si Mesas Japanese Journal of Applied Physics. ,vol. 30, pp. L423- L424 ,(1991) , 10.1143/JJAP.30.L423
H. L. Tsai, R. J. Matyi, Generation of misfit dislocations in GaAs grown on Si Applied Physics Letters. ,vol. 55, pp. 265- 267 ,(1989) , 10.1063/1.101924
J. Varrio, H. Asonen, J. Lammasniemi, K. Rakennus, M. Pessa, Model of growth of single‐domain GaAs layers on double‐domain Si substrates by molecular beam epitaxy Applied Physics Letters. ,vol. 55, pp. 1987- 1989 ,(1989) , 10.1063/1.102141
C. Vinckier, P. Coeckelberghs, G. Stevens, S. De Jaegere, Oxidation of silicon in the afterglow of microwave induced plasmas Applied Surface Science. ,vol. 30, pp. 40- 46 ,(1987) , 10.1016/0169-4332(87)90071-7
Masami Tachikawa, Hidefumi Mori, Dislocation generation of GaAs on Si in the cooling stage Applied Physics Letters. ,vol. 56, pp. 2225- 2227 ,(1990) , 10.1063/1.102951