Generation of misfit dislocations in GaAs grown on Si
作者： H. L. Tsai , R. J. Matyi
DOI: 10.1063/1.101924
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摘要: The misfit dislocation configurations in initial GaAs islands grown on silicon were studied by high‐resolution electron microscopy. Misfit dislocations, especially 60° type and stacking faults, observed to generate from near the edges of islands. Large steps substrate surface help nucleation these dislocations. presence threading dislocations thicker films is attributed segments A mechanism proposed explain propagation multiplication during coalescence their subsequent growth.
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