InP on patterned Si(001): defect reduction by application of the necking mechanism
作者： A. Krost , M. Grundmann , D. Bimberg , H. Cerva
DOI: 10.1016/0022-0248(92)90461-Q
关键词: Nucleation 、 Transmission electron microscopy 、 Chemistry 、 Optoelectronics 、 Stacking 、 Substrate (electronics) 、 Layer (electronics) 、 Necking 、 Optics 、 Chemical vapor deposition 、 Quantum efficiency
摘要: Abstract InP is grown by low-pressure metalorganic chemical vapor deposition on exactly (001)-oriented, patterned Si substrates. The structure consists of narrow stripes different widths down to 0.6 μm oriented along [110], bound V-grooves with {111} sidewalls. Transmission electron microscopy (TEM) (110)-oriented cross sections shows that nucleation occurs (001) as well planes which results in a faceted growth. Thereby, the epilayer shape remarkably from what one would expect substrate structure. By choosing proper geometries, antiphase domain free can be grown. Moreover, increasing thickness growing layer density stacking faults and microtwins drastically reduced due their propagation towards side stripes. This process comparable necking procedure Czochralski growth technique used obtain single-crystalline material defects. defects reductions smoother surface morphology an increase quantum efficiency more than 50% compared planar film material.
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