InP on Si(111): Accommodation of lattice mismatch and structural properties
作者： A. Krost , F. Heinrichsdorff , D. Bimberg , H. Cerva
DOI: 10.1063/1.111007
关键词: Silicon 、 Partial dislocations 、 Crystallography 、 Chemical vapor deposition 、 Materials science 、 Diffraction 、 Crystal twinning 、 Vicinal 、 X-ray crystallography 、 Order of magnitude 、 Condensed matter physics
摘要: The growth of InP by low‐pressure metalorganic chemical vapor deposition on vicinal Si(111), misoriented 3° towards [112], is reported. By double crystal x‐ray diffraction an order magnitude improvement in structural quality measured as compared to Si(001). From high resolution electron microscopy near the interface a heavily twinned region 25 nm thickness found with microtwins having their twin planes parallel Si(111) surface. In this 8% misfit between and Si completely accommodated one dimension partial dislocations Burgers vectors a/6〈112〉 (Schockley dislocations) (111) surface plane which are associated formation thin close interface. Above zone crystallographic orientations identical those substrate.
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