Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth
作者： Carl Junesand , Himanshu Kataria , Wondwosen Metaferia , Nick Julian , Zhechao Wang
DOI: 10.1364/OME.3.001960
关键词: Chemical vapor deposition 、 Crystallographic defect 、 Thin film 、 Materials science 、 Semiconductor 、 Silicon 、 Optoelectronics 、 Coalescence (physics) 、 Epitaxy 、 Cathodoluminescence
摘要: InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers from single double openings SiO2 mask investigated. Whereas occasionally exhibit threading dislocations (TDs) at certain points coalescence, TDs are completely absent openings. Furthermore, stacking faults (SFs) observed both opening types originate not but possibly formation during early stages or simply propagate the seed layer through A model describing their propagation is devised applied to existent conditions, showing that SFs can effectively be filtered under conditions. identical patterns contained no defects, indicating defect-forming mechanism any case inherent itself.
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